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WMF128K8-XXX5
HI-RELIABILITY PRODUCT
128Kx8 MONOLITHIC FLASH, SMD 5962-96690
FEATURES
s Access Times of 50*, 60, 70, 90, 120, 150ns s Packaging * 32 lead, Hermetic Ceramic, 0.400" SOJ (Package 101) * 32 pin, Hermetic Ceramic, 0.600" DIP (Package 300) * 32 lead, Flatpack (Package 220) * 32 lead, Formed Flatpack (Package 221) * 32 pin, Rectangular Ceramic Leadless Chip Carrier (Package 601) s 100,000 Erase/Program Cycles Minimum s Sector Erase Architecture * 8 equal size sectors of 16KBytes each * Any combination of sectors can be concurrently erased. Also supports full chip erase s Organized as 128Kx8 s Commercial, Industrial and Military Temperature Ranges s 5 Volt Programming. 5V 10% Supply. s Low Power CMOS s Embedded Erase and Program Algorithms s TTL Compatible Inputs and CMOS Outputs s Page Program Operation and Internal Program Control Time.
Note: For programming information refer to Flash Programming 1M5 Application Note. * The access time of 50ns is available in Industrial and Commercial temperature ranges only.
PIN CONFIGURATION FOR WMF128K8-XXX5
32 DIP 32 CSOJ 32 FLATPACK
PIN CONFIGURATION FOR WMF128K8-XCLX5
32 CLCC
TOP VIEW
A12
NC A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 VSS
TOP VIEW
A15 A16 VCC WE NC
VCC WE NC A14 A13 A8 A9 A11 OE A10 CS I/O7 I/O6 I/O5 I/O4 I/O3
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17
4 3 2 1 32 31 30 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 5 29 6 28 7 27 8 26 9 25 10 24 11 23 12 22 13 21 14 15 16 17 18 19 20 A14 A13 A8 A9 A11 OE A10 CS I/O7
I/O1
I/O2
I/O3
I/O4
I/O5
PIN DESCRIPTION
A0-16 I/O0-7 CS OE WE VCC VSS Address Inputs Data Input/Output Chip Select Output Enable Write Enable +5.0V Power Ground
April 2001 Rev. 5
1
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I/O6
VSS
NC
WMF128K8-XXX5
ABSOLUTE MAXIMUM RATINGS (1)
Parameter Operating Temperature Supply Voltage Range (VCC) Signal voltage range (any pin except A9) (2) Storage Temperature Range Lead Temperature (soldering, 10 seconds) Data Retention Mil Temp Endurance (write/erase cycles) Mil Temp A9 Voltage for sector protect (VID) (3) -55 to +125 -2.0 to +7.0 -2.0 to +7.0 -65 to +150 +300 10 10,000 min. -2.0 to +14.0 Unit C V V C C years cycles V Parameter Address Input capacitance Output Enable capacitance Write Enable capacitance Chip Select capacitance Data I/O capacitance
RECOMMENDED OPERATING CONDITIONS
Parameter Supply Voltage Input High Voltage Input Low Voltage Operating Temp. (Mil.) Operating Temp. (Ind.) A9 Voltage for Sector Protect Symbol VCC VIH VIL TA TA VID Min 4.5 2.0 -0.5 -55 -40 11.5 Max 5.5 VCC + 0.3 +0.8 +125 +85 12.5 Unit V V V C C V
CAPACITANCE (TA = +25C)
Symbol CAD COE CWE CCS CI/O Conditions VI/O = 0 V, f = 1.0 MHz VIN = 0 V, f = 1.0 MHz VIN = 0 V, f = 1.0 MHz VIN = 0 V, f = 1.0 MHz VI/O = 0 V, f = 1.0 MHz Max Unit 15 15 15 15 15 pF pF pF pF pF
NOTES: 1. Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2. Minimum DC voltage on input or I/O pins is -0.5V. During voltage transitions, inputs may overshoot VSS to -2.0 V for periods of up to 20ns. Maximum DC voltage on output and I/O pins is VCC + 0.5V. During voltage transitions, outputs may overshoot to Vcc + 2.0 V for periods of up to 20ns. 3. Minimum DC input voltage on A9 pin is -0.5V. During voltage transitions, A9 may overshoot Vss to -2V for periods of up to 20ns. Maximum DC input voltage on A9 is +13.5V which may overshoot to 14.0 V for periods up to 20ns.
This parameter is guaranteed by design but not tested.
DC CHARACTERISTICS - CMOS COMPATIBLE (VCC = 5.0V, VSS = 0V, TA = -55C to +125C)
Parameter Input Leakage Current Output Leakage Current VCC Active Current for Read (1) VCC Active Current for Program or Erase (2) VCC Standby Current Output Low Voltage Output High Voltage Output High Voltage Low VCC Lock Out Voltage Symbol ILI ILO ICC1 ICC2 ICC3 VOL VOH1 VOH2 VLKO Conditions VCC = 5.5, VIN = GND to VCC VCC = 5.5, VIN = GND to VCC CS = VIL, OE = VIH CS = VIL, OE = VIH VCC = 5.5, CS = VIH, f = 5MHz IOL = 8.0 mA, VCC = 4.5 IOH = -2.5 mA, VCC = 4.5 IOH = -100 A, VCC = 4.5 0.85 x VCC VCC - 0.4 3.2 Min Max 10 10 35 50 1.6 0.45 Unit A A mA mA mA V V V V
NOTES: 1. The ICC current listed includes both the DC operating current and the frequency dependent component (at 5 MHz). The frequency component typically is less than 2 mA/MHz, with OE at VIH. 2. ICC active while Embedded Algorithm (program or erase) is in progress. 3. DC test conditions: VIL = 0.3V, VIH = VCC - 0.3V
AC TEST CIRCUIT
I OL Current Source
AC TEST CONDITIONS
Parameter Input Pulse Levels Input Rise and Fall Input and Output Reference Level Output Timing Reference Level Typ VIL = 0, VIH = 3.0 5 1.5 1.5 Unit V ns V V
D.U.T. C eff = 50 pf
VZ
1.5V
(Bipolar Supply)
I OH Current Source
NOTES: VZ is programmable from -2V to +7V. IOL & IOH programmable from 0 to 16mA. Tester Impedance Z0 = 75 . VZ is typically the midpoint of VOH and VOL. IOL & IOH are adjusted to simulate a typical resistive load circuit. ATE tester includes jig capacitance.
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2
WMF128K8-XXX5
AC CHARACTERISTICS - WRITE/ERASE/PROGRAM OPERATIONS, WE CONTROLLED (VCC = 5.0V, VSS = 0V, TA = -55C to +125C)
Parameter Symbol Min Write Cycle Time Chip Select Setup Time Write Enable Pulse Width Address Setup Time Data Setup Time Data Hold Time Address Hold Time Chip Select Hold Time Write Enable Pulse Width High tAVAV tELWL tWLWH tAVWL tDVWH tWHDX tWLAX tWHEH tWHWL tWC tCS tWP tAS tDS tDH tAH tCH tWPH 50 0 25 0 25 0 40 0 20 14 2.2 0 tVCS 50 12.5 tOES tOEH 0 10 0 10 60 -50 Max Min 60 0 30 0 30 0 45 0 20 14 2.2 0 50 12.5 0 10 60 -60 Max -70 Min 70 0 35 0 30 0 45 0 20 14 2.2 0 50 12.5 0 10 60 Max -90 Min 90 0 45 0 45 0 45 0 20 14 2.2 0 50 12.5 0 10 60 Max -120 Min 120 0 50 0 50 0 50 0 20 14 2.2 0 50 12.5 0 10 60 Max -150 Min 150 0 50 0 50 0 50 0 20 14 2.2 0 50 12.5 60 Max ns ns ns ns ns ns ns ns ns s sec ns s sec ns ns Unit
Duration of Byte Programming Operation (min) tWHWH1 Sector Erase Time Read Recovery Time Before Write VCC Setup Time Chip Programming Time Output Enable Setup Time Output Enable Hold Time (1) 1. For Toggle and Data Polling. tWHWH2 tGHWL
AC CHARACTERISTICS - READ ONLY OPERATIONS (VCC = 5.0V, VSS = 0V, TA = -55C to +125C)
Parameter Read Cycle Time Address Access Time Chip Select Access Time OE to Output Valid Chip Select to Output High Z (1) OE High to Output High Z (1) Output Hold from Address, CS or OE Change, whichever is first 1. Guaranteed by design, not tested. Symbol tAVAV tAVQV tELQV tGLQV tEHQZ tGHQZ tAXQX tRC tACC tCE tOE tDF tDF tOH 0 50 50 50 25 20 20 0 -50 Min Max 60 60 60 30 20 20 0 -60 Min Max 70 70 70 35 20 20 0 -70 Min Max 90 90 90 40 25 25 0 -90 Min Max -120 Min 120 120 120 50 30 30 0 Max -150 Min 150 150 150 55 35 35 Max ns ns ns ns ns ns ns Unit
3
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WMF128K8-XXX5
AC CHARACTERISTICS - WRITE/ERASE/PROGRAM OPERATIONS, CS CONTROLLED (VCC = 5.0V, VSS = 0V, TA = -55C to +125C)
Parameter Write Cycle Time WE Setup Time CS Pulse Width Address Setup Time Data Setup Time Data Hold Time Address Hold Time WE Hold from WE High CS Pulse Width High Duration of Programming Operation Duration of Erase Operation Read Recovery before Write Chip Programming Time Symbol tAVAV tWLEL tELEH tAVEL tDVEH tEHDX tELAX tEHWH tEHEL tWHWH1 tWHWH2 tGHEL tWC tWS tCP tAS tDS tDH tAH tWH tCPH 50 0 25 0 25 0 40 0 20 14 2.2 0 12.5 60 -50 Min Max 60 0 30 0 30 0 45 0 20 14 2.2 0 12.5 60 -60 Min Max 70 0 35 0 30 0 45 0 20 14 2.2 0 12.5 60 -70 Min Max Min 90 0 45 0 45 0 45 0 20 14 2.2 0 12.5 60 -90 Max -120 Min 120 0 50 0 50 0 50 0 20 14 2.2 0 12.5 60 Max -150 Min 150 0 50 0 50 0 50 0 20 14 2.2 0 12.5 60 Max ns ns ns ns ns ns ns ns ns s sec ns sec Unit
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4
WMF128K8-XXX5
AC WAVEFORMS FOR READ OPERATIONS
tDF
tOH
Addresses Stable
tRC
tOE
tACC
tCE
WE
OE
Addresses
5
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Outputs
CS
High Z
Output Valid
High Z
WMF128K8-XXX5
WRITE/ERASE/PROGRAM OPERATION, WE CONTROLLED
tRC
tOH
tDF
tOE
Data Polling
tAH
tWHWH1
PA
tAS
tWPH
tDH
5555H
tGHWL
tWC
tWP
tCS
A0H
PD
I/O7
PA
I/OOUT
NOTES: 1. PA is the address of the memory location to be programmed. 2. PD is the data to be programmed at byte address. 3. I/O7 is the output of the complement of the data written to the device. 4. I/OOUT is the output of the data written to the device. 5. Figure indicates last two bus cycles of four bus cycle sequence.
Addresses
WE
OE
CS
tDS
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6
5.0 V
Data
tCE
WMF128K8-XXX5
AC WAVEFORMS CHIP/SECTOR ERASE OPERATIONS
SA
2AAAH
5555H
2AAAH
5555H
tWPH
tAS
5555H
tWP
AAH tDS
tGHWL
tCS
tDH
55H
tAH
80H
AAH
55H
10H/30H
Addresses
WE
OE
CS
Data
NOTES: 1. SA is the sector address for Sector Erase.
7
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VCC
tVCS
WMF128K8-XXX5
AC WAVEFORMS FOR DATA POLLING DURING EMBEDDED ALGORITHM OPERATIONS
tDF
tOH
High Z
I/O7 = Valid Data
I/O0-7 Valid Data tWHWH 1 or 2 Data I/O0-6 I/O0-6 = Invalid tOE
tOE
tCH
tOEH
tCE
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8
WE
OE
CS
I/O7
I/O7
WMF128K8-XXX5
WRITE/ERASE/PROGRAM OPERATION, CS CONTROLLED
PA
Data Polling
tAH
tWHWH1
PA
tAS
tGHEL
tCP
tCPH
tDH A0H
5555H
tWC
tWS
PD WE OE CS tDS
Addresses
I/O7
I/OOUT
NOTES: 1. PA represents the address of the memory location to be programmed. 2. PD represents the data to be programmed at byte address. 3. I/O7 is the output of the complement of the data written to the device. 4. I/OOUT is the output of the data written to the device. 5. Figure indicates the last two bus cycles of a four bus cycle sequence.
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5.0 V
Data
WMF128K8-XXX5
PACKAGE 101:
32 LEAD, CERAMIC SOJ
21.1 (0.830) 0.25 (0.010) 0.2 (0.008) 0.05 (0.002) 3.96 (0.156) MAX 0.89 (0.035) Radius TYP
11.3 (0.446) 0.2 (0.009)
9.55 (0.376) 0.25 (0.010)
1.27 (0.050) 0.25 (0.010)
PIN 1 IDENTIFIER 1.27 (0.050) TYP 19.1 (0.750) TYP
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
PACKAGE 220:
32 LEAD, CERAMIC FLATPACK
20.83 (0.820) 0.25 (0.010) 2.60 (0.102) MAX PIN 1 IDENTIFIER
10.41 (0.410) 0.13 (0.005)
10.16 (0.400) 0.51 (0.020)
0.43 (0.017) 0.05 (0.002)
0.127 (0.005) + 0.05 (0.002) - 0.025 (0.001)
1.27 (0.050) TYP 19.05 (0.750) TYP
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
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10
WMF128K8-XXX5
PACKAGE 221:
32 LEAD, FORMED CERAMIC FLATPACK
3.35 (0.132) MAX 20.83 (0.820) 0.25 (0.010) 0.15 (0.006) TYP 1.27 (0.050) TYP
10.41 (0.410) 0.13 (0.005)
+ +
13.47 (0.530) 0.13 (0.005)
0.43 (0.017) 0.05 (0.002)
0 / -4
0.63 (0.025) TYP
1.27 (0.050) TYP 19.05 (0.750) TYP 1.52 (0.060) TYP
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
PACKAGE 300:
32 PIN, CERAMIC DIP, SINGLE CAVITY SIDE BRAZED
42.8 (1.686) MAX
5.13 (0.202) MAX PIN 1 IDENTIFIER 3.2 (0.125) MIN 0.99 (0.039) 0.51 (0.020) 2.5 (0.100) TYP 1.27 (0.050) 0.1 (0.005) 0.46 (0.018) 0.05 (0.002) 0.25 (0.010) 0.05 (0.002) 15.25 (0.600) 0.25 (0.010)
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
11
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WMF128K8-XXX5
PACKAGE 601:
32 PIN, RECTANGULAR CERAMIC LEADLESS CHIP CARRIER
7.62 (0.300) TYP 3.81 (0.150) TYP
5.08 (0.200) TYP 0.56 (0.022) 0.71 (0.028)
10.16 (0.400) TYP PIN 1
0.38 (0.015) x 45 PIN 1 IDENTIFIER
11.25 (0.443) 11.60 (0.457)
1.63 (0.064) 2.54 (0.100)
13.79 (0.543) 14.15 (0.557)
1.02 (0.040) x 45 3 PLACES 32PinCLCCpkgdim.eps
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
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12
WMF128K8-XXX5
ORDERING INFORMATION W M F 128K8 - XXX X X 5 X
LEAD FINISH: Blank = Gold plated leads A = Solder dip leads VPP PROGRAMMING VOLTAGE 5 = 5V DEVICE GRADE: Q = MIL-STD-883 Compliant M = Military Screened I = Industrial C = Commercial PACKAGE TYPE: DE = 32 Lead Ceramic SOJ (Package 101) C = 32 Pin Ceramic DIP (Package 300) FE = 32 Lead Ceramic Flatpack (Package 220) FF = 32 Lead Formed Ceramic Flatpack (Package 221) CL = 32 Pin rectangular Ceramic Leadless Chip Carrier (Package 601) ACCESS TIME (ns) ORGANIZATION, 128K x 8 Flash MONOLITHIC WHITE ELECTRONIC DESIGNS CORP. -55C to +125C -40C to +85C 0C to +70C
13
White Electronic Designs Corporation * (602) 437-1520 * www.whiteedc.com
WMF128K8-XXX5
DEVICE TYPE
128K x 8 Flash Monolithic 128K x 8 Flash Monolithic 128K x 8 Flash Monolithic 128K x 8 Flash Monolithic 128K x 8 Flash Monolithic 128K x 8 Flash Monolithic 128K x 8 Flash Monolithic 128K x 8 Flash Monolithic 128K x 8 Flash Monolithic 128K x 8 Flash Monolithic
SECTOR SIZE
16KByte 16KByte 16KByte 16KByte 16KByte 16KByte 16KByte 16KByte 16KByte 16KByte
SPEED
150ns 120ns 90ns 70ns 60ns 150ns 120ns 90ns 70ns 60ns
PACKAGE
32 pin DIP (C) 32 pin DIP (C) 32 pin DIP (C) 32 pin DIP (C) 32 pin DIP (C) 32 lead SOJ (DE) 32 lead SOJ (DE) 32 lead SOJ (DE) 32 lead SOJ (DE) 32 lead SOJ (DE)
SMD NO.
5962-96690 01HYX 5962-96690 02HYX 5962-96690 03HYX 5962-96690 04HYX 5962-96690 05HYX 5962-96690 01HXX 5962-96690 02HXX 5962-96690 03HXX 5962-96690 04HXX 5962-96690 05HXX
128K x 8 Flash Monolithic 128K x 8 Flash Monolithic 128K x 8 Flash Monolithic 128K x 8 Flash Monolithic 128K x 8 Flash Monolithic
16KByte 16KByte 16KByte 16KByte 16KByte
150ns 120ns 90ns 70ns 60ns
32 lead Flatpack (FE) 32 lead Flatpack (FE) 32 lead Flatpack (FE) 32 lead Flatpack (FE) 32 lead Flatpack (FE)
5962-96690 01HTX 5962-96690 02HTX 5962-96690 03HTX 5962-96690 04HTX 5962-96690 05HTX
128K x 8 Flash Monolithic 128K x 8 Flash Monolithic 128K x 8 Flash Monolithic 128K x 8 Flash Monolithic 128K x 8 Flash Monolithic
16KByte 16KByte 16KByte 16KByte 16KByte
150ns 120ns 90ns 70ns 60ns
32 lead Formed Flatpack (FF) 32 lead Formed Flatpack (FF) 32 lead Formed Flatpack (FF) 32 lead Formed Flatpack (FF) 32 lead Formed Flatpack (FF)
5962-96690 01HUX 5962-96690 02HUX 5962-96690 03HUX 5962-96690 04HUX 5962-96690 05HUX
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